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The IGBT module is a power device, which has the advantages of low driving voltage, strong power processing ability, and high switching frequency. But it also cannot be separated from thermal characteristics. The weakness of power semiconductor modules is over voltage and overheating. If this heat is not effectively managed, it may lead to equipment failure, reduced efficiency, and shortened lifespan. Only by accurately designing the thermal characteristics of devices and systems can we ensure the long-term reliable operation of devices and fully tap into their potential, which is the thermal management of IGBTs.
The continuing miniaturization and rapid increasing power ratings of IGBTs have remarkable high heat flux, which requires complex thermal management.
For modules, IGBT heat dissipation technology mainly revolves around packaging and connection iteration. The module packaging and connection technology always revolves around the continuous optimization of the substrate, DBC board, welding, binding lines, and heat dissipation structure.
Chip to chip connection method: aluminum wire/strip → copper wire → flat connection
Heat dissipation structure: single-sided indirect heat dissipation → single-sided direct water cooling → double-sided water cooling structure.
DBC board and substrate: material iteration, from A1203 → AIN → Si3N4, and the substrate material will iterate from Cu to A1SiC.
When IGBT power devices operate, a large amount of heat is generated due to on state losses and switching losses. The heat dissipation path from top to bottom is as follows: chip → ceramic copper-clad plate → substrate → heat sink. Finally, the heat is carried away by the heat sink and air through convection and radiation heat transfer, using active or passive heat dissipation.
There is thermal resistance throughout the entire conduction process, which is the main factor affecting the heat dissipation of IGBT power modules. To enhance the heat dissipation effect, reducing thermal resistance is the most important method.